Praxair Electronics Technology Forum
Tuesday, July 15, 2008
W Hotel, San Francisco, CA
During SEMICON West

Technology Forum 2:30 - 5:45pm
Poster Reception 5:45 - 8:00pm

The industry's quest for innovative solution for continued device scaling is a key challenge. Collaboration is a fundamental element to realize future achievements. The forum's topics will include materials and process issues in both the front-end and back-end of line, in current and future semiconductor manufacturing.

Keynote 1: Prashant Majhi, Ph.D., Intel Assignee at SEMATECH
CMOS Scaling for the Next Decade: Challenges and Opportunities
CMOS scaling has clearly reached fundamental material limits, and we are now in the era where further scaling can be realized mainly by new materials and/or device architecture. This presentation will review some of the recent highlights in several modules including gate stacks, junctions, contacts and channels that collectively enable CMOS scaling for performance and cost. Also, an outlook of the primary challenges and opportunities that lie ahead to keep up the scaling roadmap in the next decade, will be provided.

Keynote 2: David K. Watts, Ph.D., Manager BEOL Technology Development, IBM
Advanced BEOL Integration Enabling 32nm and Beyond
Copper metallization at 32nm and beyond poses multiple technical challenges that must be overcome in order to continue meeting the expected enhancements of future generations within the semiconductor industry. In addition to scaling to dimensions that creates significant patterning challenges, and requires films of just a few atoms in thickness, consideration must also be given to liner and dielectric materials, deposition processes, and integration schemes to successfully achieve requirements for technology extendibility, circuit performance, reliability and manufacturability. This presentation will review some of the key Back end of line (BEOL) technology development advances, challenges and innovative solutions by the IBM development alliance Cu interconnect integration.

Click here to register.

Panelists

Lisa Fanti, Ph.D., Director, Electronics Research and Development, Praxair

Gurtej Sandhu, Director, Advanced Technology, Research and Development, Micron Technology, Inc.

Ken MacWilliams, Vice President & General Manager, Maydan Technology Center, Applied Materials

Moderator
Tom Cheyney, senior contributing editor to Fabtech and PV-Tech and journalist, editor, blogger, and consultant who has covered the semiconductor manufacturing and related micro/nanoelectronics sectors for more than 20 years.

Come to the Praxair Electronics Technology Forum to share ideas on enhanced channel mobility, new gate stacks, reduced RC delay, and other materials-driven challenges of advanced semiconductor devices and help accelerate the future of extraordinary innovations.

Do you know someone else who would be interested in this event?
Send them an invitation.

Recipient Email (multiple addresses may be entered separated by semicolons)


Your message:

Dr. Prashant Majhi holds a doctoral degree in science and engineering of materials from Arizona State University, Tempe, AZ and bachelor of technology degree from the Indian Institute of Technology, Madras.

Dr. Majhi joined the process development group at Philips Semiconductors in the Netherlands in 2000 and had been the project leader in module development for several CMOS and mixed signal process technologies. In October 2004, he joined Intel Corp., and is at SEMATECH as an Intel Assignee managing the Advanced Gate Electrodes group.

Dr. Majhi has authored or co-authored more than 75 papers in journals and conferences and holds several IC process development patents.

Click here to register.

Dr. David K. Watts holds a bachelor of arts from Carleton College and a doctorate in chemistry from the University of California and the University of Colorado. Watts joined IBM in 2005, and brings outstanding semiconductor experience in process development, yield enhancement and cost reduction. As the 32nm BEOL Development Manager at IBMs East Fishkill facility, he has experience both from within IBM BEOL development, as well as brings a supplier's perspective to IBM from previous work while with Ebara. He is currently responsible for managing technology development at IBM's Semiconductor Research and Development Center (SRDC). His work enables the successful integration of interconnect with copper and ultralow dielectric constant materials for delivering advanced technology nodes from research through to manufacturing.

Prior to joining IBM, Watts was a first-line unit process manager at Motorola's Advanced Products Research and Developments Labs. He developed and ramped into manufacturing an industry leading six-level copper process. This innovation enabled the first ever Cu semiconductor devices at the 180nm technology node.

Dr. Watts holds more than 20 patents, and has over 30 published papers and invited or keynote presentations.

Click here to register.

Dr. Lisa Fanti holds doctoral and master of science degrees in chemical engineering from the University of Pennsylvania, and a bachelor of science degree from Rensselaer Polytechnic Institute.

Lisa recently joined Praxair in 2008 as Director of Research and Development for Praxair Electronics, responsible for developing and commercializing competitive materials and technology solutions aimed to better serve the semiconductor, flat panel, and solar markets. Prior to accepting the position with Praxair, Lisa spent 19 years at IBM in East Fishkill, NY, where she held various technical and managerial positions in research, development, manufacturing and business. Lisa worked on the development and implementation of unit processes for electronic packaging and semiconductor applications, including electrolytic copper deposition and C4 bumping processes. In 2001, she joined the management team responsible for the bring-up of the East Fishkill 300mm wafer facility. In 2005, she transitioned to a position focused on executing technology alliances for microelectronics.

Lisa holds several patents in electronics unit processing.

Click here to register.

Dr. Gurtej S. Sandhu is Director of Advanced Technology developments at Micron Technology, Inc. He received his degree in electrical engineering at the Indian Institute of Technology, New Delhi and a doctoral degree in physics at the University of North Carolina, Chapel Hill, in 1990. He then joined Micron Technology, where he has been in a number of engineering and management roles responsible for process technology development, pilot manufacturing and transfers to manufacturing. He has been involved with a broad range of process technologies, such as ion implantation, deposition technologies, plasma processing, CMP, Litho and front-end and back-end module integration technologies for IC processing. He has been associated with microelectronics technology for over 15 years and has pioneered a number of process technologies such as CVD Ti, Plasma MOCVD TiN among others, which are currently employed in semiconductor chip manufacturing. Moreover, he has been associated with introduction of a number of Atomic Layer Deposition (ALD) based processes and innovative patterning techniques for memory chip technology. Dr. Sandhu has authored over 35 technical papers and holds more than 700 U.S. patents.

Click here to register.

Dr. Ken MacWilliams is presently Vice President & General Manager of the Applied Materials Maydan Technology Integration Center focused on next generation logic and memory integration. Prior to joining Applied in 2002, he held a number of executive positions at Novellus Systems including VP/GM of the PECVD Business Unit. Before 1996, he worked on Integrated Circuit process and device technology at The Aerospace Corporation, eventually becoming Director of the Microelectronics Laboratory. He has more than 100 technical papers and patents related to microelectronics technology. Ken received his bachelor's degree in physics & electrical engineering from Clarkson University and his master's and doctoral degrees in electrical engineering (Microelectronics Process & Device Technology) from Stanford University.

Click here to register.